Research Blogs
Influence of recombination rates on transient photoluminescence and efficiency of TADF OLEDs
OLEDs made by thermally-activated delayed fluorescence (TADF) materials as emitters promise an IQE of 100%. Here, we want to present an analysis of the influence of non-radiative recombination rates (knrs and knrt) on the device efficiency as well as how to determine them from experiments. As we will see, the knr rate influences PLQY, and consequently ELQY, hence the negative impact on EQE.
First, to determine the non-radiative decay rates, we need to extract the rates kf, krisc, and kisc by fitting transient photoluminescence (trPL) measurements of TADF films.
Fitting routine for a reliable transient photoluminescence simulation of perovskite films
Transient photoluminescence (trPL) characterization experiments allow to analysis charge carrier dynamics and identify the recombination channels of the device structure under investigation.
Useful information that can be extracted includes the quantification of radiative and non-radiative lifetimes, charge carrier extraction from differential lifetime computation, and the influence of the interfaces on the recombination mechanism. Fitting the experimental results with simulations further supports the analysis of the obtained data. However, qualitatively comparable fittings can be obtained with different sets of simulation parameters.
Using the fully-coupled, 1-dimensional optoelectronic simulation software Setfos, the trPL signal of a simple glass/perovskite structure was simulated and a routine is suggested to ascertain the reliability of the results. This routine is based on experimentally measured material properties and the analysis of the band diagram evolution during the photoluminescence transient. The validity of the simulated trPL is also recursively verified by fitting the decay with a bi-exponential function to extract the lifetimes of the recombination mechanisms.