Paios Features
The combination of opto-electrical measurements in steady-state, frequency and time domain provides deeper insight into the device physics
Main Characteristics
Parameter Sweep
Sweeping means that your measurement is performed several times by changing one or two parameters. Paios allows to graphically check the measurement data easily with a sweep slider.
Data Acquisition and Comparison
Paios is more than a measurement tool. It acquires systematic data of dozens of devices and lets you compare them in its management software. Learn from your experiments without tedious manual processing of data.
User-Defined Signals for Custom-made Experiments
Design your own transient experiments using the Paios signal editor.
A new idea for an experiment can easily be tested.
Correction of RC-Effects
RC-effects are superimposed on the device current and can significantly disturb transient experiments. Paios provides routines to extract the series resistance and the geometric capacitance of the device.
Flexible Time-Resolution
Traditional measurement setups using linear time sampling can resolve only 3 orders of magnitude in time.
Paios performs measurements over 8 orders of magnitude in time, in one shot.
This feature is especially useful for perovskite solar cells. Perovskite solar cells exhibit an extraordinarily broad dynamic range from microseconds to minutes. These time dynamics can be resolved with the feature Flex-Res of Paios
Perovskite: Device Preconditioning
The response of perovskite solar cells depends on the «internal state» of the device prior to the measurement. This leads to hysteresis in the IV curve. Paios can precondition the device with voltage, current, or illumination and perform the experiments directly afterward. This increases the experiment reproducibility.
Use preconditioning to investigate the effect of mobile ions, ferroelectricity, or deep trap sites.
In our blog “WHY PEROVSKITE SOLAR CELLS WITH HIGH-EFFICIENCY SHOW SMALL IV-CURVE HYSTERESIS” we describe how to study hysteresis effects in perovskite solar cells with a combined experimental and simulation method.
Postprocessing
Paios comes with flexible and user-friendly post-processing routines included. This enables to easily analyze experiments and extract parameters even for novice users.
Charge Carrier Mobility form photo-CELIV
Extract the charge carrier mobility of solar cells using the photo-CELIV experiment.
Doping Density from Dark-CELIV
The dark-CELIV overshoot is integrated (shown in blue) to obtain the doping density.
Phosphorescence Lifetime from TEL
Extract the luminescence lifetime of OLEDs from EL turn-off.
Permittivity from Voltage Pulse
A voltage pulse in reverse allows to extract the capacitance and the permittivity.
Equivalent Circuit Fitting
Impedance spectroscopy data is often analyzed with equivalent circuits. In Paios all kinds of circuits can be fitting to the measurement data.
Charge Carrier Mobility from Mott-Gurney
In monopolar devices, the charge carrier mobility can be extracted from an IV-curve using an SCLC-fit.
Doping Density from Mott-Schottky
With a Mott-Schottky analysis, the doping density of a semiconductor can be extracted.
Basic Solar Cell Parameters
Extract short-circuit current, open-circuit-voltage, the MMP, and the fill factor of a solar cell.
Mobility from Transient Electroluminescence
IExtracts the mobility from the delay time between voltage and EL turn-on of an OLED.
Series Resistance from Impedance
A very reliable method to extract the series resistance and the geometric capacitance from impedance data.
Recombination from photo-CELIV
Extracts the recombination coefficient from photo-CELIV or charge extraction measurement with varied delay-time.
Transport-Time from IMPS
Easily determine the IMPS transport-time that describes how fast charges reach the contacts.
Automated Fitting - Setfos/Paios Integration
Many electrical parameters of organic, perovskite and hybrid devices cannot be determined easily. Comprehensive device modeling is required to extract these parameters. Paios does the job for you. The parameter fitting routine optimizes simulation parameters to meet defined targets and calculates the parameter correlation to check the quality of the fit.
Use Setfos-Paios Integration to extract the following parameters:
Electron and hole mobility
Recombination efficiency or charge carrier lifetime
Charge injection barriers
The change of all extracted parameters is displayed during the data fitting
Built-in voltage / HOMO / LUMO
Trap density
Trap depth
Doping density
Permanent dipole moments
Series resistance
Electrical permittivity
Emitter lifetime (OLED)
Photon to charge conversion efficiency (PV)
Paios performs global parameter fits on a combination of all available experiments, e.g. capacitance-voltage, impedance, IV-curves, TPV, TPC, photo-CELIV. Our advanced algorithms make it possible to get a fitting within a few minutes. Parameter evolution and fit results can be monitored directly during optimization.
The fit quality can be analyzed with the correlation matrix that is automatically calculated by Paios. The correlation matrix is important to judge how accurate the extracted parameters are.
Measurements and simulations are brought to agreement
The correlation matrix shows the quality of the fit.
We are demonstrating the advantage of a combined experimental (PAIOS) and simulation (SETFOS) approach in our blog “ANALYSIS OF TADF OLED DEGRADATION BY COMBINING ADVANCED CHARACTERIZATION AND SIMULATION”.
Examples - Characterization Suite
Wizard to Add New Experiments
User Defined Signals
Temperature Dependent CELIV Measurement
Measurement in Progress
Defining Device Parameters
CELIV Postprocessing to Extract Charge Carrier Density
Compare Device Parameters
CELIV Experiment Definition
Stress-Test Definition
Equivalent Circuit Fitting for Impedance Measurements
Determine Solar Cell Parameters
Device Parameter Overview
IV-Curved with Varied Light Intensity
Comparing Simulation Result with Measurement
T R I A L E V A L U A T I O N
