Paios Features

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The combination of opto-electrical measurements in steady-state, frequency and time domain provides deeper insight into the device physics. The experimental capabilities listed below are provided through Fluxim’s Characterization Suite (CS) software—operational across Paios, Phelos, and Litos platforms—enabling advanced measurement control, data analysis, and parameter extraction.

Main Characteristics

Parameter Sweep (via CS Software)

Sweeping means that the experiment is performed several times by changing one or two parameters. Paios allows to graphically check the measurement data easily with a sweep slider.

Data Acquisition and Comparison

Paios is more than a measurement tool. It acquires systematic data of dozens of devices and lets you compare them in its management software. Learn from your experiments without tedious manual processing of data.

User-Defined Signals for Custom-made Experiments

Design your own transient experiments using the Paios signal editor.
A new idea for an experiment can easily be tested.

Correction of RC-Effects

RC-effects are superimposed on the device current and can significantly disturb transient experiments. Paios provides routines to extract the series resistance and the geometric capacitance of the device.

Flexible Time-Resolution

Traditional measurement setups using linear time sampling can resolve only 3 orders of magnitude in time. Paios performs measurements over 7 orders of magnitude in time, in one shot.

This feature is especially useful for perovskite solar cells. Perovskite based devices exhibit an extraordinarily broad dynamic range from microseconds to minutes. These time dynamics can be resolved with the feature Flex-Res of Paios.

Perovskite: Device Preconditioning

The response of perovskite solar cells and LEDs depends on the spatial ion distribution of the device prior to the measurement. This leads to hysteresis in the IV curve. Paios can precondition the device with voltage, current, and/or illumination and perform the experiments directly afterward. This increases the experiment reproducibility and helps to better understand mobile ions.

Use preconditioning to investigate the effect of mobile ions, or deep trap sites.

In our blog “WHY PEROVSKITE SOLAR CELLS WITH HIGH-EFFICIENCY SHOW SMALL IV-CURVE HYSTERESIS” we describe how to study hysteresis effects in perovskite solar cells with a combined experimental and simulation method.

Postprocessing (via CS Software)

Paios comes with flexible and user-friendly post-processing routines. This enables to easily analyze experiments and extract parameters even for novice users.

Charge Carrier Mobility from Photo-CELIV

Extract the charge carrier mobility in solar cells using the photo-CELIV experiment.

Charge/Doping Density from Photo/Dark-CELIV

The CELIV overshoot is integrated (shown in blue) to obtain the photogenerated charge or intrinsic doping density.

Phosphorescence Lifetime from TEL

Extract the luminescence lifetime of OLEDs from the EL decay.

Permittivity from Voltage Pulse

A small voltage pulse in reverse allows to extract the capacitance and the permittivity.

Equivalent Circuit Fitting

Impedance spectroscopy data is often analyzed with equivalent circuits. In CS many different as well as user-defined circuits can be fitted to the measurement data.

Charge Carrier Mobility from Mott-Gurney

In monopolar devices, the charge carrier mobility can be extracted from an IV-curve using an SCLC-fit.

Doping Density from Capacitance-Voltage

With a Mott-Schottky analysis, the doping density of a semiconductor can be extracted.

Basic Solar Cell Parameters from IV

Extract short-circuit current, open-circuit-voltage, the MMP, and the fill factor of a solar cell.

Mobility from Transient Electroluminescence

Extract the mobility from the delay time between voltage and EL turn-on of an OLED.

RC from Impedance

A very reliable method to extract the series resistance, parallel resistance and the geometric capacitance from impedance data.

Recombination from OTRACE

Extracts the recombination coefficient from ORTACE-CELIV or charge extraction with varied delay time.

Transport Time from IMPS

Easily determine the IMPS transport-time that describes how fast charges are collected.

Examples - Characterization Suite

Screenshot of a software interface titled 'Add New Measurement Type' with a list of device types on the left, including Light Emitting Device, Photovoltaic Device, Monopolar Device, and Electrochemical Device, each with a chart. The right side describes various measurement types such as Current-Voltage Characteristics, Transient Photocurrent, Transient Photovoltaic, Voltage Pulse/DIT/DLTS, CELIV, Charge Extraction, Impedance Spectroscopy, Capacitance-Voltage Characteristics, IMPS/IMVS, Current Pulse, and User Defined Experiment, with corresponding graphics and 'Add' buttons. The bottom has 'Cancel' and 'Add' buttons, with 'Cancel' at the bottom right corner.

Wizard to Add New Experiments

User Defined Signals

Temperature Dependent CELIV Measurement

Measurement in Progress

Defining Device Parameters

CELIV Postprocessing to Extract Charge Carrier Density

Compare Device Parameters

CELIV Experiment Definition

Stress-Test Definition

Equivalent Circuit Fitting for Impedance Measurements

Determine Solar Cell Parameters

Device Parameter Overview

IV-Curved with Varied Light Intensity

Comparing Simulation Result with Measurement

One-/Two-Diode Model

A common method to fit the IV-curve and obtain global device parameters like the ideality factor. 

Characteristic frequency/time from impedance

Find peaks in different representations of the impedance spectroscopy data and store their characteristic time. 

Recombination Lifetime from TPV Decay: Determine the recombination lifetime by fitting the TPV decay with a mono- or biexponential decay.

Recombination Lifetime from IMVS

Extract the lifetime from the characteristic frequency.  

Kramers-Kronig Impedance Test

Check the consistency of the impedance data. 

Characteristic Time from TPC Rise/Decay: Determine characteristic times of charge collection by fitting the TPC rise or decay with a single or double exponential.

Basic (O)LED parameters from IVL

Extract IVL parameters at a fixed current to compare them between different devices.  

RC from dark-CELIV

This method allows to independently obtain the geometric capacitance and series resistance. 

Turn-on voltage of (O)LEDs

Automatically obtain the onset voltage of the emission from the IVL curve. 

T R I A L E V A L U A T I O N

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