Research Paper — Setfos Explains Double-Emitter OLED Efficiency Gains

This ACS Applied Electronic Materials paper presents a ν-DABNA double-emitter ultrathin-EML OLED that increases peak EQE from 9.6% to 14.2%. By placing a second ultrathin emitter away from the primary mCP/PO-T2T recombination interface, the device improves exciton harvesting and reduces non-radiative losses. Setfos was used for optical mode analysis and electro-optical OLED simulations, showing that the efficiency gain is mainly driven by FRET-mediated exciton redistribution rather than optical-cavity effects.

Publication details

Authors: Edoardo Stanzani, Michele Forzatti, Sergio M. Saiz, Daniel Tordera, Henk J. Bolink, Simon Zeder, Vasileios Georgakopoulos Paltidis, Balthasar Blülle, Beat Ruhstaller, Sandra Jenatsch
Journal: ACS Applied Electronic Materials
Year: 2026
DOI: 10.1021/acsaelm.6c00271

Fluxim tools used

• Setfos — used for Optical Mode Analysis, 1D drift-diffusion, and 3D Master Equation OLED simulations.

Why it matters

• Shows how emitter placement can improve EQE in simplified, nondoped OLED stacks.

• Demonstrates how Setfos separates optical outcoupling from electronic and excitonic loss mechanisms.

• Provides a simulation-supported route for OLED researchers working on exciton management and efficiency roll-off.

FAQs

Q: Which Fluxim tool was used in this paper?
A: Setfos was used for optical and electro-optical OLED simulations.

Q: What did Setfos help show?
A: Setfos helped show that the EQE improvement is not mainly caused by optical-cavity effects, but by exciton redistribution and FRET-mediated harvesting.

Q: Why is this relevant for OLED R&D?
A: It shows how simulation can guide emitter placement, exciton management, and simplified OLED stack design.