Transient Measurements and Simulations Correlate Exchange Ligand Concentration and Trap States in Colloidal Quantum Dot Photodetectors

Darshan H. Parmar, Benjamin Rehl, Ozan Atan, Sjoerd Hoogland, and Edward H. Sargent

ACS Applied Materials & Interfaces Article ASAP

DOI: 10.1021/acsami.3c14611

Colloidal quantum dot photodetectors exceed silicon's limits by detecting longer wavelengths, with performance depending on the ligand concentration during processing. This study connects simulated and actual photocurrent responses, showing that different ligand concentrations uniquely impact trap state density and device behavior.

How Setfos was used

Setfos was used to show how the transient measurements were consistent with a changing trap density in the photodetector active layer with respect to ligand exchange concentration.

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High-Efficiency Linearly Polarized Organic Light-Emitting Diodes

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Spin Quantum Dot Light-Emitting Diodes Enabled by 2D Chiral Perovskite with Spin-Dependent Carrier Transport