Equivalent-circuit modeling of electron-hole recombination in semiconductors and mixed ionic-electronic conductors
Moia, D. (2025). Equivalent-circuit modeling of electron-hole recombination in semiconductors and mixed ionic-electronic conductors. Physical Review Applied, 23(1), 014055. https://doi.org/10.1103/PhysRevApplied.23.014055
The goal of this study was to develop an accurate equivalent circuit model describing electron-hole recombination processes in semiconductors and mixed ionic-electronic conductors, enabling better interpretation of small-signal measurements like impedance spectroscopy.
Key findings demonstrated that radiative recombination can be modeled with resistors, while nonradiative recombination (e.g., Shockley-Read-Hall and Auger processes) requires bipolar transistors for full accuracy. These elements were integrated into a generalized transmission-line model, equivalent to the linearized drift-diffusion equations. Simplified models, accounting for bulk and interfacial polarization effects, were also derived to interpret low-frequency features like capacitive and inductive responses observed experimentally in devices such as halide perovskite solar cells.
Fluxim’s tools, particularly Paios for impedance spectroscopy and transient characterization, and Setfos for optical and device modeling, align perfectly with the study’s approach. Paios would enable precise measurement of recombination dynamics and low-frequency responses, while Setfos could simulate corresponding optical and electrical effects. Using such tools would streamline validation of these advanced circuit models in real device studies.
These findings are important because they bridge the gap between physical recombination processes and accessible analytical models, offering the scientific community improved methods to diagnose, design, and optimize photovoltaic and optoelectronic devices.