Features of the Drift-diffusion Module
- Charge drift-diffusion and trapping
- Excition generation, diffusion, energy transfer
- Transient and steady-state solver
- Field, temperature and density dependent mobility model, extended Gaussian disorder model (EGDM)
- Customizable numerical methods
- User-defined charge distribution initialization
Drift-Diffusion
The drift-diffusion module works out profiles and transients of device internal quantities that couple with the optical models for comprehensive optoelectronic simulations. Get insight into the physics of your semiconducting device and reproduce its I-V characteristics.
Mobility models implemented
- Constant mobilities
- Field dependent mobilities
- Field and Temperature dependent mobilities
- Extended Gaussian Disorder model
- Charge-Density dependent mobilities
Movies
Study, display and show intrinsic physical quantities with the automatic movie generator.
Left: Current density profile transients within a MEH-PPV thin film for a pulsed applied voltage (first 150 microseconds, 4 V). Click to animate.
Go to "Semiconducting devices" and Physical parameter extraction" applications.
